![]() ![]() Such miniaturized RF devices are modeled as lumped lament equivalent circuits. The geometrical dimensions of RF devices are less than the wavelength of the signal passing through them. Lumped element modeling with equivalent circuits is advantageous in predicting band characteristics of RF devices, especially the center frequency and the frequency bandwidth. In tunable devices such as resonators and filters, the magnetic and electric tunability and substrate characteristics can be easily predicted. In substrate integrated inductors and capacitors, the lumped lament equivalent circuit model can describe the effect of the quality factor. The ferromagnetic resonance effects, coupling between the transmission lines and PCB laminates, or silicon substrate should be considered in lumped element modeling. The lumped element model of an RF circuit can incorporate the presence of saturating magnetic materials and parasitic effects in the equivalent circuit. The dielectric substrate losses, conductor losses, radiation losses, and substrate eddy currents should be taken into account in lumped element equivalent circuit models. The interconnects in the circuit can be modeled using lumped element equivalent circuits, which take into consideration the skin effect and proximity effect. The frequency dependence on the operation of the RF device can be studied from the lumped element equivalent circuit. The Merits Of Lumped Element Equivalent Circuit ModelsĪ lumped element model converts the RF MEMS switch or substrate-integrated cavity resonator into two-port or multiport networks composed of resistors, inductors, and capacitors. Lumped element model-based simulation is faster than full-wave electromagnetic simulation. Lumped element models consume less simulation time and give accurate results about electrical and thermal performances and losses. The lumped element modeling of miniaturized RF and microwave components provides an equivalent circuit consisting of lumped elements-mainly resistance, inductance, capacitance, impedance, and admittance. The lumped element models of RF and microwave components-such as monolithic chips, substrate-integrated components, or RF MEMS-are helpful in simulating their electrical characteristics. The complexity of RF circuits can also arise out of memory problems. When the simulation model becomes complex, full-wave simulation takes longer to provide results. Usually, to accurately determine the electrical characteristics of these devices, full-wave electromagnetic simulation is used. They are lightweight, consume minimal energy, are low cost, and easily integrate with other circuit elements. These devices fit in a tiny footprint area and help make the circuit compact. Lumped Element Modeling With Equivalent CircuitsĪs part of miniaturization in RF and microwave circuits, monolithic or substrate-integrated devices or microelectromechanical structures are used. The electric performance, thermal behavior, stresses, and losses in micro RF devices can be accurately analyzed with lumped element equivalent circuit models. It is important for circuit design and simulation to extract lumped element modeling with equivalent circuits for these miniaturized RF components. ![]() In RF and microwave engineering, an extensive range of monolithic, substrate-integrated devices or MEMS are utilized. Lumped element modeling with equivalent circuits is useful for circuit design and simulation The values of an equivalent circuit element can be extracted from S-parameter data by using genetic algorithms or artificial neural networks. Lumped element models consume less simulation time and provide accurate results regarding electrical and thermal performance and loss. The lumped element models of RF and microwave components, such as monolithic chips, substrate-integrated components, or RF MEMS, are useful in simulating their electrical characteristics.
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